CM1000E3U-34NF Datasheet, PDF (3/5 Pages) Powerex Power Semiconductors – Mega Power Chopper IGBTMOD 1000 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM1000E3U-34NF
Mega Power Chopper IGBTMOD™
1000 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Emitter-Collector Voltage^*1
External Gate Resistance
I_CES
I_GES
V_GE(th)
V_CE(sat)
(Chip)
R_(lead)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V_EC
R_G
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
I_C = 100mA, V_CE = 10V
I_C = 1000A, V_GE = 15V, T_j = 25°C^*3
I_C = 1000A, V_GE = 15V, T_j = 125°C^*3
I_C = 1000A, Terminal-Chip
V_CE = 10V, V_GE = 0V
V_CC = 1000V, I_C = 1000A, V_GE = 15V
V_CC = 1000V, I_C = 1000A,
V_GE = ±15V,
R_G = 0.47Ω,
Inductive Load
I_E = 75A, V_GE = 0V^*3
Min.
–
–
5.5
–
–
–
–
–
–
–
–
–
–
–
–
0.47
Typ.
–
–
7
2.2
2.45
0.286
–
–
–
6000
–
–
–
–
–
–
Max.
1
0.5
8.5
2.8
–
–
220
25
4.7
–
600
150
900
200
2.8
4.7
Units
mA
μA
Volts
Volts
Volts
mΩ
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Ω
Clamp Diode Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Repetitive Peak Reverse Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I_RRM
V_FM
t_rr
Q_rr
V_R = V_RRM
I_F =1000A^*3
I_F =1000A
I_F =1000A
Min.
Typ.
Max. Units
–
–
1
mA
–
–
3.0
Volts
–
–
450
ns
–
90
–
μC
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case^*4
R_th(j-c)Q
IGBT
–
Thermal Resistance, Junction to Case^*4
R_th(j-c)D
Clamp
–
Thermal Resistance, Junction to Case^*6
R_th(j-c')Q
IGBT
–
Thermal Resistance, Junction to Case^*6
R_th(j-c')D
Clamp
–
Thermal Resistance, Junction to Case^*4
R_th(c-f)D Thermal Grease Applied per 1/2 Module^*5 –
Contact Thermal Resistance^*6
R_th(c-f) Thermal Grease Applied per 1/2 Module^*5 –
*1 I_E, I_EM, and V_EC represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T_C) is baseplate side.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*6 Case temperature (T_C') and heatsink temperature (T_f') measured point is just under the chips.
Typ.
–
–
–
–
0.016
0.012
Max.
0.032
0.053
0.014
0.023
–
–
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
04/09
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