CD6215B Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts

Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 [phone]
CD62__15B
CD67__15B
POW-R-BLOK^TM
Dual SCR/Diode Isolated Module
150 Amperes / Up to 1800 Volts
Electrical Characteristics, T_J=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max. Units
Repetitive Peak Forward Leakage Current
Repetitive Peak Reverse Leakage Current
Peak On-State Voltage
Threshold Voltage, Low-level
Slope Resistance, Low-level
Minimum dV/dt
Turn-Off Time (Typical)
Gate Trigger Current
Gate Trigger Voltage
Non-Triggering Gate Voltage
Non-Triggering Gate Current
Holding Current
Latching Current
I_DRM
I_RRM
V_TM / V_FM
V_(TO)1
r_T1
dV/dt
t _off
I_GT
V_GT
V_GDM
I_GDM
I_H
I_L
Up to 1600V, T_J=125°C
Up to 1600V, T_J=125°C
I_TM / I_FM =500A
T_J = 125°C, I = 16.7% x πI_T(AV) to πI_T(AV)
Exponential to 2/3 V_DRM
T_j=125°C, Gate Open
1000
T_J = 125°C, I_T= 300A, R_gk = 100Ω
V_r = 50V, -dI/dt=15 A/µs
Re-Applied dV/dt = 20V/µs,
Linear to 2/3 V_DRM
50 - 200
T_j= 25°C, V_D=6V, R_a=1Ω Resistive Load
T_j= 25°C, V_D=6V, R_a=1Ω, Resistive Load
T_j=125°C, V_D=V_DRM
T_j=125°C, V_D=V_DRM
T_J=25°C
150
T_J=25°C
300
50
50
1.6
0.85
1.5
(Typical)
150
2.0
0.25
10
(Typical)
(Typical)
mA
mA
V
V
mΩ
V/µs
µs
mA
Volts
Volts
mA
mA
mA
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
DC Operation
Thermal Resistance, Case to Sink Lubricated
Symbol
R_ΘJ-C
R_ΘC-S
Per Module, both conducting
Per Junction, both conducting
Per Module
Max.
0.085
0.17
0.05
Units
°C/W
°C/W
°C/W
Information presented is based upon manufacturers testing and projected capabilities.
This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability,
or future availability of this product.
Revision Date: 04/28/2009