QIQ0660001 Datasheet, PDF (2/3 Pages) Powerex Power Semiconductors – IGBT H-Series Chopper Hermetic Module (600 Amperes/600 Volts)

Powerex Inc., 200 Hillis St., Youngwood, PA 15697 [phone]
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
Collector Emitter Voltage
Gate Emitter Voltage
V_CES
V_GES
Collector Current
Peak Collector Current
Diode Forward Current (D2)
Diode Forward Current (D1)
V Isolation
I_C
I_CM
I_FM
I_FM
V_RMS
QIQ0660001
IGBT H-Series Chopper
Hermetic Module
600 Amperes/600 Volts
600
±20
600
1200*
600
400
2500
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test
Min Typ Max
Conditions
Collector Cutoff Current
I_CES
V_CE=V_CES
1.0
Gate Leakage Current
I_GES
V_CE=0V
0.5
Gate-Emitter Threshold Voltage
V_GE(th)
Collector-Emitter Saturation Voltage V_CE(sat)
V_CE(sat)
I_C=60mA,
V_CE=10V
I_C=600A,
V_GE=15V
I_C=600A,
V_GE=15V,
T_j=150°C
4.5 6.0 7.5
2.1 2.8
2.15
Total Gate Charge
Diode Forward Voltage (D1)
Diode Forward Voltage (D2)
Q_G
V_CC=300V,
I_C=600A,
V_GS=15V
V_FM
I_E=400A,
V_GS=0V
V_FM
I_E=600A,
V_GS=0V
1800
2.0
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test
Min Typ Max
Conditions
Input Capacitance
C_ies
V_GE=0V
60
Output Capacitance
C_oes
V_CE=10V
21
Reverse Transfer Capacitance
C_res
f=1MHz
12
Turn on Delay time
t_d(on)
V_CC=300V
Rise Time
t_r
I_C=600A
Turn off delay time
t_d(off)
V_GE1=V_GE2=15
V
Fall Time
t_f
Diode Reverse Recovery Time (D1)
trr
Diode Reverse Recovery Time (D2)
trr
Diode reverse Recovery Charge (D1)
Qrr
R_G=1Ω
I_E=400A
I_E=600A
di_E/dt=
400A/µS
300
400
110
80
Diode reverse Recovery Charge (D2)
Qrr
di_E/dt=
1.62
1200A/µS
Units
nF
nF
nF
nS
nS
nS
nS
nS
nS
µC
µC
Page 2
PRELIMINARY
06/06/97