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QIQ0630003 Datasheet, PDF (2/2 Pages) Powerex Power Semiconductors – Low side Chopper IGBT Module
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Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272
www.pwrx.com
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current
Diode Average Forward Current 180° Conduction, TC=78°C
Diode Forward Surge Current
Diode I2t for Fusing for One Cycle t=8.3mS
Power Dissipation
Junction Temperature
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
QIQ0630003
Low side Chopper IGBT Module
600V 300A IGBT / 600V 300A Fast Diode
Symbol
VCES
VGES
IC
ICM
IFM
IFM
I2t
Pd
Tstg
-
-
-
VRMS
600
±20
300
600
300
3600
54000
1100
-40 to 125
17
26
270
2000
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
A2sec
Watts
°C
In-lb
In-lb
Grams
Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min Typ Max
Units
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
ICES
IGES
VCE=VCES VGE=0V
-
VGE=VGES VCE=0V
-
-
1.0
-
0.5
VGE(th)
IC=30mA, VCE=10V 4.5
6.0
7.5
VCE(sat)
IC=300A, VGE=15V
-
2.1
2.8
IC=300A, VGE=15V,
-
2.15
-
Tj=125°C
QG
VCC=300V,
-
IC=300A, VGS=15V
VFM
IF=600A
-
900
-
2.0
2.8
IF=300A
-
1.7
2.2
IF=200A
-
1.3
-
mA
μA
Volts
Volts
Volts
nC
Volts
Volts
Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min
Typ
Max
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn off delay time
Fall Time
Diode Reverse Recovery Time
Diode reverse Recovery Charge
Cies
VGE=0V
-
-
30
Coes
VCE=10V
-
-
10.5
Cres
f=1MHz
-
-
6
td(on)
VCC=300V
-
-
350
tr
IC=300A
-
-
600
td(off)
VGE1=VGE2=15V
-
-
350
tf
RG=2.1Ω
-
-
300
trr
IF=600A
-
-
110
Qrr
diF/dt=-1200A/μS
-
1.62
-
Units
nF
nF
nF
nS
nS
nS
nS
nS
μC
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min
Typ
Max
Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
RθJC
Per IGBT
-
0.11 TBD
°C/W
RθJC
Per Diode
-
0.12 TBD
°C/W
RθCF
Per Module
-
-
0.065
°C/W
Preliminary
Page 2
03/06/2008