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QID0630006 Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts)
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Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
Collector Emitter Voltage
Gate Emitter Voltage
VCES
VGES
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
V Isolation
IC
ICM
IFM
IFM
Pd
VRMS
QID0630006
Dual IGBT H-Series
Hermetic Module
300 Amperes/600 Volts
600
±20
300
600*
300
600*
1100
2500
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test
Min Typ
Conditions
Collector Cutoff Current
Gate Leakage Current
ICES
VCE=VCES
IGES
VCE=0V
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage VCE(sat)
VCE(sat)
IC=30mA,
VCE=10V
IC=300A,
VGE=15V
IC=300A,
VGE=15V,
Tj=150°C
4.5 6.0
2.1
2.15
Total Gate Charge
Diode Forward Voltage
QG
VCC=300V,
900
IC=300A,
VGS=15V
VFM
IE=300A,
VGS=0V
Max
1.0
0.5
7.5
2.8
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test
Min Typ Max
Conditions
Input Capacitance
Cies
VGE=0V
30
Output Capacitance
Coes
VCE=10V
10.5
Reverse Transfer Capacitance
Cres
f=1MHz
6
Turn on Delay time
td(on)
VCC=300V
350
Rise Time
tr
IC=300A
600
Turn off delay time
td(off)
VGE1=VGE2=15
350
V
Fall Time
Diode Reverse Recovery Time
Diode reverse Recovery Charge
tf
RG=2.1Ω
trr
IE=300A
Qrr
diE/dt=-
600A/µS
300
150
0.81
Units
nF
nF
nF
nS
nS
nS
nS
nS
µC
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test
Min Typ Max Units
Conditions
Thermal Resistance, Junction to Case
RθJC
Thermal Resistance, Junction to Case
RθJC
Per IGBT
Per Diode
0.11 °C/W
0.24 °C/W
Page 2
4/11/2001
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