QIC0620003 Datasheet, PDF (2/2 Pages) Powerex Power Semiconductors – Dual IGBT Common Emitter Module (200 Amp/600 Volts)

Preliminary
QIC0620003
200 Amp/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Dual IGBT Common Emitter Module
200 Amp/600 Volts
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
QIC0620003
Collector Emitter Voltage
VCES
600
Gate Emitter Voltage
VGES
±20
Collector Current
IC
200
Peak Collector Current
ICM
400*
Diode Forward Current
IF
50
Diode Forward Surge Current
IFM
500
Junction Temperature
Tj
-40 to 150
Storage Temperature
Tstg
-40 to 125
Mounting Torque, M6 Terminal Screws
-
40
Mounting Torque, M6 Mounting Screws
-
40
Module Weight (Typical)
-
200
V Isolation
VRMS
2500
*Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
°C
°C
In-lb
In-lb
Grams
Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min.
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
ICES
IGES
VCE=VCES VGE=0V
-
VGE=VGES VCE=0V
-
VGE(th)
IC=20mA, VCE=10V
4.5
VCE(sat)
IC=200A, VGE=15V
-
IC=200A, VGE=15V,
-
Tj=150°C
QG
VCC=300V,
-
IC=200A, VGS=15V
VFM
IF=50A, VGS=0V
-
Typ.
-
-
6.0
2.1
2.15
600
-
Max.
1.0
0.5
7.5
2.8
-
-
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn- off Delay Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
Test Conditions
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=200A
VGE1=VGE2=15V
RG=3.1Ω
IF=50A
diF/dt=-100A/µS
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
0.37
Max.
20
7
4
200
550
300
300
110
-
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min. Typ.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Thermal Grease
Applied
R_θJC
R_θJC
R_θCF
Per IGBT
Per Diode
Per Module
-
0.14
-
0.70
-
-
Max.
TBD
TBD
0.075
Units
nF
nF
ns
ns
ns
ns
ns
ns
µC
Units
°C/W
°C/W
°C/W