English
Language : 

PS11012 Datasheet, PDF (2/6 Pages) Powerex Power Semiconductors – FLAT-BASE TYPE INSULATED TYPE
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
INTERNAL FUNCTIONS BLOCK DIAGRAM
C3 ; 3.3µF or more, tight tolerance, temp-compensated electrolytic type (Note : the value may change
depending on the type PWM control scheme used in the applied system)
C4 ; 2µF R-category ceramic condenser for noise filtering.
Application Specific Intelligent
Power Module
Brake resistor
P2
connection,
B
Inrush prevention
circuit, etc.
P1
Protection
Circuit
Level shifter
Drive Circuit
AC200V line input
R
S
T
U
V
W
M
ZC
N
T.S.
AC 200V line
output
Z : Surge absorber.
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
surge absorber circuit maybe necessary
depending on the application environment].
Current sensing
circuit
Trig signal conditioning
Drive Curcuit
FO Logic Protection
circuit
Control supply
fault sense
CU CV CW
UPVPWPUN VNWN Br CL FO1 FO2 FO3
C2 ;
C2
3.3µF or more
Analogue signal output corresponding to Each phase input (PWM) Fault output
each phase current (5V line) Note 1)
(5V line) Note 2) (5V line) Note 3)
GND VDH
(15V line)
Note 1) To prevent chances of signal oscillation, an RC coupling at each output is recommended. (see also Fig.10)
Note 2) By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU, without any opto or transformer isolation ispossible. (see also Fig.10)
Note 3) All these outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1kΩ resistance. (see also Fig.10)
Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage. For extra
precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P and N DC powerinput pins.
(Fig. 2)
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART (Including Brake Part)
Symbol
VCC
VCC(surge)
VP or VN
VP(S) or VN(S)
±IC(±ICP)
IC(ICP)
IF(IFP)
Item
Supply voltage
Supply voltage (surge)
Each output IGBT collector-emitter static voltage
Each output IGBT collector-emitter
switching surge voltage
Each output IGBT collector current
Brake IGBT collector current
Brake diode anode current
Condition
Applied between P2-N
Applied between P2-N, Surge-value
Applied between P-U, V, W, Br or U, V, W,
Br-N
Applied between P-U, V, W, Br or U, V, W,
Br-N
TC = 25°C
Note: “( )” means IC peak value
CONVERTER PART
Symbol
VRRM
Ea
IO
IFSM
I2t
Item
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Condition
3φ rectifying circuit
1 cycle at 60Hz, peak value non-repetitive
Value for one cycle of surge current
CONTROL PART
Symbol
Item
VDH, VDB Supply voltage
VCIN
VFO
IFO
VCL
ICL
ICO
Input signal voltage
Fault output supply voltage
Fault output current
Current-limit warning (CL) output voltage
CL output current
Analogue current signal output current
Condition
Applied between VDH-GND, CBU+-CBU–,
CBV+-CBV–, CBW+-CBW–
Applied between UP · VP · WP · UN · VN ·
WN · Br-GND
Applied between FO1 · FO2 · FO3-GND
Sink current of FO1 · FO2 · FO3
Applied between CL-GND
Sink current of CL
Sink current of CU · CV · CW
Ratings
450
500
600
600
±4 (±8)
2 (4)
2 (4)
Ratings
800
220
25
138
80
Ratings
20
–0.5 ~ 7.5
–0.5 ~ 7
15
–0.5 ~ 7
15
±1
Unit
V
V
V
V
A
A
A
Unit
V
V
A
A
A2s
Unit
V
V
V
mA
V
mA
mA
Jan. 2000