GU-C40 Datasheet, PDF (2/3 Pages) Mitsubishi Electric Semiconductor – High Power Inverter Use

MITSUBISHI GATE DRIVER FOR GCT THYRISTOR
GU-C40
High Power Inverter Use
CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
+VC
Power supply (+)
DC power supply 10A
(Note 1, 3) 4.5
5.0
5.5
V
–VC
Power supply (–)
DC power supply 6A
(Note 2, 3)
19
20
21
V
–
Control signal
Optical fiber data link
Receiver: HFBR-2522 (HP)
—
—
—
—
f
Frequency
1500Arms Duty 50%
—
—
500 Hz
ton min Turn-on minimum
Protection is 28µs min and 32µs max.
(Note 4)
28
30
32
µs
toff min Turn-off minimum
Protection is 44µs min and 52µs max.
(Note 5)
44
50
52
µs
tfd
Delay time of on gate current
7
8
9
µs
trd
Delay time of off gate current
5
6
7
µs
diG/dt
Critical rate of rise of on gate current
100
—
—
A/µs
IGM
Peak on gate current
—
200
—
A
tw
Width of on high gate current
5
—
—
µs
IG
On gate current
10
—
—
A
diGQ/dt Critical rate of rise of off gate current VRG = 20V
—
6000
—
A/µs
Dmax
Maximum duty
—
—
50
%
Ta
Temperature
–10
—
+60
°C
Thermal resistance
Rth
(Junction to Fin)
GU-C40 and FGC4000BX-90DS
—
(Note 6)
— 0.012 °C/W
Note 1. In case of DC power supply which has no current control, please be careful that rush current (peak value 140A, width 2ms) flows at the turn on of
power supply in 1m cable for power supply.
2. In case of DC power supply which has no current control, please be careful that rush current (peak value 140A, width 2ms) flows at the turn on of
power supply in 1m cable for power supply.
3. Main current condition of GCT Thyristor is 1500Arms and duty 50%.
4. If input turn-on signal is shorter than ton (min) protection operates and turn on width is 28µs min and 32µs max.
5. If turn-on signal is input during toff (min) protection operates and turn off width is 44µs min and 52µs max.
6. If GU-C40 and FGC4000BX-90DS are used together, Rth (j-f) is becomes 0.012°C/W.
(Only FGC4000BX-90DS is used. Rth(j-f) becomes 0.011°C/W)
Aug.1998