FY5ACJ-03A Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 2.5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2.5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.6A, VGS = 0V
Channel to ambient
IS = 1.6A, dis/dt = –50A/µs
Limits
Min.
Typ. Max.
30
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
22
30
—
34
55
—
110
150
—
10
—
—
760
—
—
270
—
—
125
—
—
15
—
—
20
—
—
50
—
—
40
—
—
0.75 1.10
—
—
73.5
—
40
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
5
3
2
tw = 100µs
10¹
7
5
1ms
3
2
10⁰
10ms
7
5
100ms
3
2
10^{–1 TC = 25°C}
7 ^{Single Pulse}
5
23
5 7 10⁰ 2 3
DC
5 7 10¹ 2 3 5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 10V 8V
6V
5V
40
TC = 25°C
30
Pulse Test
4V
20
10
3V
PD = 1.7W
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 10V
8V
6V
16
5V
4V
TC = 25°C
Pulse Test
12
8
3V
4
PD = 1.7W
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998