FS50VSJ-03 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS50VSJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 4V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 25A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ. Max.
30
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
1.0
1.5
2.0
V
—
15
19
mΩ
—
21
35
mΩ
—
0.375 0.475 V
—
28
—
S
—
1600
—
pF
—
500
—
pF
—
260
—
pF
—
17
—
ns
—
90
—
ns
—
130
—
ns
—
125
—
ns
—
1.0
1.5
V
—
—
2.78 °C/W
—
60
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
10²
7
tw = 10ms
5
3
2
100ms
10¹
7
1ms
5
3
2
TC = 25°C
10⁰ Single Pulse
7
5
10ms
DC
3
3
5 7 10⁰ 2 3
5 7 10¹
23
5 7 10² 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
VGS = 10V
TC = 25°C
Pulse Test
80
5V
60
4V
OUTPUT CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
Pulse Test
40
VGS = 10V
6V
30
5V
4V
3V
40
3V
20
PD = 45W
2V
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
20
PD = 45W
10
2V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999