FS20SM-12 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS20SM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
600
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
0.33
0.43
Ω
—
3.3
4.3
V
8.0
13
—
S
—
2800
—
pF
—
350
—
pF
—
50
—
pF
—
50
—
ns
—
85
—
ns
—
350
—
ns
—
100
—
ns
—
1.5
2.0
V
—
—
0.45 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
250
200
150
100
50
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
PD = 275W
40
20V
TC = 25°C
Pulse Test
6V
30
MAXIMUM SAFE OPERATING AREA
10²
7
5
tw=10µs
3
2
100µs
10¹
7
5
1ms
3
2
10⁰
7
5
3
2
TC = 25°C
Single Pulse
10ms
100ms
DC
10^–1
2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³ 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
20
10V
8V
TC = 25°C
6V
Pulse Test
16
5V
12
20
5V
10
4V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
8
4
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999