FS12UMA-4A Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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MITSUBISHI Nch POWER MOSFET
FS12UMA-4A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±10µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 200V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 10V
ID = 6A, VGS = 10V
ID = 6A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 100V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω
IS = 6A, VGS = 0V
Channel to case
PERFORMANCE CURVES
Limits
Unit
Min.
Typ. Max.
200
—
—
V
±20
V
—
—
±10
µA
—
—
1
mA
2.0
3.0
4.0
V
—
0.30
0.40
Ω
—
1.80
2.40
V
—
8.0
—
S
—
700
—
pF
—
95
—
pF
—
30
—
pF
—
15
—
ns
—
20
—
ns
—
110
—
ns
—
35
—
ns
—
0.95
—
V
—
—
2.50 °C/W
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
5
3
2
10¹
tw = 10µs
7
5
3
100µs
2
10⁰
1ms
7
5
10ms
3
2
DC
10^{–1 TC = 25°C}
7 ^{Single Pulse}
5
23
5 7 10¹ 2 3
5 7 10² 2 3
5 7 10³ 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 20V
10V
16
8V
6V
5V
12
PD = 50W
TC = 25°C
8
Pulse Test
4
4V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
Pulse Test
8
4.5V
VGS = 20V
10V
6
8V
PD = 50W
4
4.0V
2
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998