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FS10KMA-5A Datasheet, PDF (2/2 Pages) Powerex Power Semiconductors – Nch POWER MOSFET HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI Nch POWER MOSFET
FS10KMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50â¦
IS = 5A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
250
â
â
V
â
â
±10
µA
â
â
1
mA
2.0
3.0
4.0
V
â
0.40
0.52
â¦
â
2.00
2.60
V
â
9.0
â
S
â
950
â
pF
â
90
â
pF
â
25
â
pF
â
20
â
ns
â
25
â
ns
â
150
â
ns
â
40
â
ns
â
0.95
â
V
â
â
3.91 °C/W
Sep.1998
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