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FS10KM-6 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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MITSUBISHI Nch POWER MOSFET
FS10KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50â¦
IS = 5A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
300
â
â
V
±30
â
â
V
â
â
±10
µA
â
â
1
mA
2
3
4
V
â
0.52
0.68
â¦
â
2.6
3.4
V
4.0
6.0
â
S
â
570
â
pF
â
110
â
pF
â
20
â
pF
â
17
â
ns
â
25
â
ns
â
60
â
ns
â
30
â
ns
â
1.5
2.0
V
â
â
3.57 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
20
PD=
10V
35W
TC = 25°C
Pulse Test
16
7V
12
6V
8
4
5V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
7
5
3
2
tw=10µs
101
7
100µs
5
3
2
1ms
100
7
5
10ms
3
2 TC = 25°C
Single Pulse
10â1
DC
7
5
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10
PD=
10V
35W
6V
8
6
5.5V
4
5V
2
TC = 25°C
Pulse Test
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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