FGC3500AX-120DS Datasheet, PDF (2/3 Pages) Powerex Power Semiconductors – HIGH POWER INVERTER USE PRESS PACK TYPE

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MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC3500AX-120DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
IGT
VGT
Rth(j-f)
Parameter
Test conditions
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Gate trigger current
Gate trigger voltage
Thermal resistance
IT = 4000A, Tj = 125°C
VRM = 21V, Tj = 125°C
VDM = 6000V, VGK = –2V, Tj = 125°C
VRG = 21V, Tj = 125°C
VD = 3600V, VGK = –2V, Tj = 125°C
(Expo. wave)
(see Fig. 4)
VD = 3600V, IT = 3500A, di/dt = 1000A/µs
IGM = 200A, diG/dt = 100A/µs, Tj = 125°C
(see Fig. 1, 2)
VDM = 6000V, VD = 3600V, IT = 3500A
diGQ/dt = 6000A/µs, CC = 6µF, LC = 0.3µH
VRG = 20V, Tj = 125°C
(see Fig. 1, 3)
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
3000
—
—
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
1.2
—
19
—
—
—
Max
4.0
100
150
100
—
3.0
1.0
—
3.0
—
2.5
1.5
0.011
Unit
V
mA
mA
mA
V/µs
µs
µs
J/P
µs
J/P
A
V
°C/W
Fig. 1 Turn-on and Turn-off waveform
VD
IT
td
tgt
diG/dt
VRG
IGM
IG
VD
ts
diGQ/dt
IGQ
VRG
td ; 0VG ~ 0.9VD
tgt ; 0VG ~ 0.1VD
diG/dt ; 0.1IGM ~ 0.9IGM
ts ; 0VG ~ 0.9IT
diGQ/dt ; 0.1IGQ ~ 0.9IGQ
Fig. 2 Turn-on test circuit
L
GCT
VD
Fig. 3 Turn-off test circuit
(With clamp circuit)
L(line)
L(load)
VD
GCT
FWDi
Lc
Rc
CDi
Cc
Fig. 4 dv/dt test waveform
VD
0.632VD
dV/dt 0.632VD/τ
t
τ
Sep. 2000