CM800DU-12H Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 800 Amperes/600 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
CM800DU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)
Mounting Torque, M8 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
-40 to 150
-40 to 125
600
±20
800
1600*
800
1600*
1500
95
Mounting Torque, M6 Mounting
–
40
G(E) Terminal, M4
–
15
Weight
–
1200
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Voltage
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 80mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 800A, V_GE = 15V, T_j = 25°C
I_C = 800A, V_GE = 15V, T_j = 125°C
Total Gate Charge
Q_G
V_CC = 300V, I_C = 800A, V_GE = 15V
Emitter-Collector Voltage**
V_EC
I_E = 800A, V_GE = 0V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
2
mA
–
–
0.5
µA
4.5
6
7.5
Volts
–
2.55 3.15 Volts
–
2.75 –
Volts
–
1600
–
nC
–
–
2.6
Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 300V, I_C = 800A,
Load
Rise Time
t_r
V_GE1 = V_GE2 = 15V,
Switch
Turn-off Delay Time
t_d(off)
R_G = 3.1⍀, Resistive
Times
Fall Time
t_f
Load Switching Operation
Diode Reverse Recovery Time**
t_rr
I_E = 800A, di_E/dt = -1600A/µs
Diode Reverse Recovery Charge**
Q_rr
I_E = 800A, di_E/dt = -1600A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
70.4
nf
–
–
38.4
nf
–
–
10.4
nf
–
–
400
ns
–
–
2000 ns
–
–
500
ns
–
–
300
ns
–
–
160
ns
–
1.92 –
µC
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module
–
Thermal Resistance, Junction to Case
R_th(j-c)R
Per FWDi 1/2 Module
–
Contact Thermal Resistance
2
R_th(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.010
Max. Units
0.083 °C/W
0.13 °C/W
–
°C/W