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CM75E3U-24H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75E3U-24H
Chopper IGBTMOD™ U-Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM75E3U-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
1200
±20
75
150*
75
150*
600
31
Mounting Torque, M6 Mounting
–
40
Weight
–
310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VFM
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 7.5mA, VCE = 10V
IC = 75A, VGE = 15V, Tj = 25°C
IC = 75A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 75A, VGE = 15V
IE = 75A, VGE = 0V
IF = 75A, Clamp Diode Part
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
1
mA
–
–
0.5
µA
4.5
6
7.5 Volts
–
2.9
3.7
Volts
–
2.85 –
Volts
–
280
–
nC
–
–
3.2
Volts
–
–
3.2 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 600V, IC = 75A,
VGE1 = VGE2 = 15V,
RG = 4.2⍀, Resistive
Load Switching Operation
IE = 75A, diE/dt = -150A/µs
IE = 75A, diE/dt = -150A/µs
IF = 75A, Clamp Diode Part
diF/dt = -150A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
11
nf
–
–
3.7
nf
–
–
2.2
nf
–
–
100
ns
–
–
200
ns
–
–
250
ns
–
–
350
ns
–
–
300
ns
–
0.41 –
µC
–
–
300
ns
–
0.41 –
µC
132
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