CM600DY-24S Datasheet, PDF (2/9 Pages) Powerex Power Semiconductors – Powerex Dual IGBT Modules are designed for use in switching applications.

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CM600DY-24S
Dual IGBT S-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (G-E Short-Circuited)
Gate-Emitter Voltage (C-E Short-Circuited)
Collector Current (DC, T_C = 112°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current^*2
Emitter Current (Pulse, Repetitive)^*3
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature
Maximum Case Temperature^*4
Operating Junction Temperature (Under Switching)
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
49.1
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
35.6
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
V_ISO
T_j(max)
T_C(max)
T_j(opr)
T_stg
Tr2 Tr2 Tr2
Di2 Di2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
Rating
1200
±20
600
1200
4050
600
1200
2500
175
125
-40 to +150
-40 to +125
57.5
44.3
31.1
0
0
LABEL SIDE
Tr1/Tr2: IGBT Di1/Di2: FWDi
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Volts
°C
°C
°C
°C
2
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