CM50BU-24H Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Four IGBTMOD™ U-Series Module 50 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM50BU-24H
Four IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
CM50BU-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C)
Mounting Torque, M4 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
-40 to 150
-40 to 125
1200
±20
50
100*
50
100*
400
15
Mounting Torque, M5 Mounting
–
31
Weight
–
390
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
–
Gate Leakage Voltage
I_GES
V_GE = V_GES, V_CE = 0V
–
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 5.0mA, V_CE = 10V
4.5
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 50A, V_GE = 15V, T_j = 25°C
–
I_C = 50A, V_GE = 15V, T_j = 125°C
–
Total Gate Charge
Q_G
V_CC = 600V, I_C = 50A, V_GE = 15V
–
Emitter-Collector Voltage*
V_EC
I_E = 50A, V_GE = 0V
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
–
V_CE = 10V, V_GE = 0V
–
–
V_CC = 600V, I_C = 50A,
–
V_GE1 = V_GE2 = 15V,
–
R_G = 6.3⍀, Resistive
–
Load Switching Operation
–
I_E = 50A, di_E/dt = -100A/µs
–
I_E = 50A, di_E/dt = -100A/µs
–
Typ.
–
–
6
2.9
2.85
187
–
Max.
1
0.5
7.5
3.7
–
–
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Typ.
–
–
–
–
–
–
–
–
0.28
Max.
7.5
2.6
1.5
80
200
150
350
300
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)Q
Per IGBT 1/4 Module
–
R_th(j-c)D
Per FWDi 1/4 Module
–
R_th(c-f)
Per Module, Thermal Grease Applied
–
2
Typ.
Max. Units
–
0.31 °C/W
–
0.7 °C/W
0.1
–
°C/W