CM400DY-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400DY-12H
Dual IGBTMOD™ H-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M6 Terminal Screws
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_F
I_FM
P_d
–
Max. Mounting Torque M6 Mounting Screws
–
Module Weight (Typical)
–
V Isolation
V_RMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 40mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 400A, V_GE = 15V
I_C = 400A, V_GE = 15V, T_j = 150°C
Total Gate Charge
Q_G
V_CC = 300V, I_C = 400A, V_GS = 15V
Diode Forward Voltage
V_FM
I_E = 400A, V_GS = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_GE = 0V, V_CE = 10V, f = 1MHz
Reverse Transfer Capacitance
C_res
Resistive
Turn-on Delay Time
t_d(on)
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t_r
t_d(off)
t_f
t_rr
Q_rr
V_CC = 300V, I_C = 400A,
V_GE1 = V_GE2 = 15V, R_G = 1.6Ω
I_E = 400A, di_E/dt = –800A/µs
I_E = 400A, di_E/dt = –800A/µs
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
R_th(j-c)
Per IGBT
Thermal Resistance, Junction to Case
R_th(j-c)
Per FWDi
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
250
CM400DY-12H
–40 to 150
–40 to 125
600
±20
400
800*
400
800*
1500
26
26
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
–
–
1.0
mA
–
–
0.5
µA
4.5
6.0
7.5
Volts
–
2.1
2.8** Volts
–
2.15
–
Volts
–
1200
–
nC
–
–
2.8
Volts
Min.
Typ.
Max. Units
–
–
40
nF
–
–
14
nF
–
–
8
nF
–
–
350
ns
–
–
600
ns
–
–
350
ns
–
–
300
ns
–
–
110
ns
–
1.08
–
µC
Min.
Typ.
Max. Units
–
–
0.085 °C/W
–
–
0.18 °C/W
–
–
0.045 °C/W