CM400DU-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400DU-12H
Dual IGBTMOD™ U-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
CM400DU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C)
Mounting Torque, M6 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
-40 to 150
-40 to 125
600
±20
400
800*
400
800*
1130
40
Mounting Torque, M6 Mounting
–
40
Weight
–
400
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
–
Gate Leakage Voltage
I_GES
V_GE = V_GES, V_CE = 0V
–
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 40mA, V_CE = 10V
4.5
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 400A, V_GE = 15V, T_j = 25°C
–
I_C = 400A, V_GE = 15V, T_j = 125°C
–
Total Gate Charge
Q_G
V_CC = 300V, I_C = 400A, V_GE = 15V
–
Emitter-Collector Voltage*
V_EC
I_E = 400A, V_GE = 0V
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
Typ.
–
–
6
2.4
2.6
800
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
V_CE = 10V, V_GE = 0V
V_CC = 300V, I_C = 400A,
V_GE1 = V_GE2 = 15V,
R_G = 1.6⍀, Resistive
Load Switching Operation
I_E = 400A, di_E/dt = -800A/µs
I_E = 400A, di_E/dt = -800A/µs
Min.
Typ.
Max. Units
–
–
35.2
nf
–
–
19.2
nf
–
–
5.2
nf
–
–
250
ns
–
–
600
ns
–
–
350
ns
–
–
300
ns
–
–
160
ns
–
0.96 –
µC
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)Q
Per IGBT 1/2 Module
–
R_th(j-c)D
Per FWDi 1/2 Module
–
R_th(c-f)
Per Module, Thermal Grease Applied
–
38
Typ.
–
–
0.020
Max.
0.11
0.18
–
Units
°C/W
°C/W
°C/W