CM30MD1-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM30MD1-12H
CI Module
Three Phase Converter + Three Phase Inverter
30 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M4 Mounting Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz
Converter Part
Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current
Surge (Non-repetitive) Forward Current
I²t for Fusing
Symbol
T_j
T_stg
—
—
V_RMS
V_RRM
E_a
I_O
I_FSM
I²t
IGBT Inverter Part
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current
Collector Current (Pulse)*
Emitter Current**
Emitter Current** (Pulse)*
Maximum Collector Dissipation
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_C
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Converter Sector
Repetitive Reverse Current
Forward Voltage Drop
Thermal Resistance (Junction-to-Fin)
I_RRM
V_FM
R_th(j-f)
V_R = V_RRM, T_j = 150°C
I_F = 30A
Per Diode
IGBT Inverter Sector
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate-Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I_CES
V_GE(th)
I_GES
V_CE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Thermal Resistance (Junction-to-Fin)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V_EC
t_rr
Q_rr
R_th(j-f)
V_CE = V_CES, V_GE = 0V
V_CE = 10V, I_C = 3.0mA
V_GE = V_GES, V_CE = 0V
V_GE = 15V, I_C = 30A, T_j = 25°C
V_GE = 15V, I_C = 30A, T_j = 150°C
V_GE = 0V, V_CE = 10V
V_CC = 300V, I_C = 30A, V_GE = 15V
V_GE1 = V_GE2 = 15V,
V_CC = 300V, I_C = 30A,
R_g = 21Ω,
Resistive Load
I_E = 30A, V_GE = 0V
I_E = 30A, V_GE = 0V,
di_E/dt = -60A/µs
Per IGBT
Per FWDi
* Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
** Characteristics of the anti-parallel emitter-collector free-wheel diode.
2
CM30MD1-12H
-40 to 150
-40 to 125
13
100
2500
800
220
30
550
1.2 x 10³
600
±20
30
60
30
60
66
Units
°C
°C
in-lb
Grams
Volts
Volts
Volts
Amperes
Amperes
A²s
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Min.
Typ. Max. Units
—
—
8
mA
—
—
1.5
Volts
—
—
1.7
°C/W
—
—
1
mA
4.5
6.0
7.5
Volts
—
—
0.5
µA
—
2.1
2.8
Volts
—
2.15
—
Volts
—
—
3.0
nF
—
—
2.4
nF
—
—
0.6
nF
—
90
—
nC
—
—
120
nS
—
—
300
nS
—
—
200
nS
—
—
300
nS
—
—
2.8
Volts
—
—
110
nS
—
0.08
—
µC
—
—
1.9
°C/W
—
—
2.4
°C/W