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CM300DY-12NF Datasheet, PDF (2/4 Pages) Analog Devices – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-12NF
Dual IGBTMOD⢠NF-Series Module
300 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, TC' = 89°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ⤠150°C)
Mounting Torque M5, Main Terminal
Mounting Torque M6, Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
â
â
â
VISO
CM300DY-12NF
â40 to 150
â40 to 125
600
±20
300
600*
300
600*
780
30
40
310
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
ICES
IGES
VGE(th)
VCE(sat)
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 30mA, VCE = 10V
IC = 300A, VGE = 15V, Tj = 25°C
IC = 300A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG
VCC = 300V, IC = 300A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 300A, VGE = 0V
Min.
Typ.
Max. Units
â
â
1.0
mA
â
â
0.5
µA
5.0
6.0
7.5
Volts
â
1.7
2.2
Volts
â
1.7
â
Volts
â
1200
â
nC
â
â
2.6
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Cies
â
Output Capacitance
Coes
VCE = 10V, VGE = 0V
â
Reverse Transfer Capacitance
Cres
â
Inductive
Turn-on Delay Time
td(on)
â
Load
Rise Time
tr
VCC = 300V, IC = 300A,
â
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 2.1â¦,
â
Time
Fall Time
tf
Inductive Load
â
Diode Reverse Recovery Time**
trr
Switching Operation,
â
Diode Reverse Recovery Charge**
Qrr
IE = 300A
â
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
*** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips
â
45
nf
â
5.5 nf
â
1.8 nf
â
120
ns
â
120
ns
â
350
ns
â
300
ns
â
150
ns
5.5
â
µC
2
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