CM300DU-34KA Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 300 Amperes/1700 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM300DU-34KA
Dual IGBTMOD™ KA-Series Module
300 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
CM300DU-34KA
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)
Mounting Torque, M8 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
-40 to 150
-40 to 125
1700
±20
300
600*
300
600*
1500
95
Mounting Torque, M6 Mounting
–
40
G(E) Terminal, M4
–
15
Weight
–
1200
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
3500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 30mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 300A, V_GE = 15V, T_j = 25°C
I_C = 300A, V_GE = 15V, T_j = 125°C
Total Gate Charge
Q_G
V_CC = 1000V, I_C = 300A, V_GE = 15V
Emitter-Collector Voltage**
V_EC
I_E = 300A, V_GE = 0V, T_j = 25°C
I_E = 300A, V_GE = 0V, T_j = 125°C
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
–
–
–
–
4.0
5.5
–
3.2
–
3.8
–
1350
–
–
–
2.2
Max.
1
0.5
7.0
4.0
–
–
4.6
–
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
C_res
t_d(on)
V_CC = 1000V, I_C = 300A,
Load
Switch
Times
Rise Time
Turn-off Delay Time
Fall Time
t_r
t_d(off)
t_f
V_GE1 = V_GE2 = 15V,
R_G = 3.1⍀, Resistive
Inductive Load
Diode Reverse Recovery Time**
t_rr
Switching Operation
Diode Reverse Recovery Charge**
Q_rr
I_E = 300A
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
42.0
nf
–
–
7.2
nf
–
–
2.3
nf
–
–
800
ns
–
–
300
ns
–
– 1000
ns
–
–
800
ns
–
–
600
ns
–
11.2
–
µC
2