CM200DY-34A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING US

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CM200DY-34A
Dual IGBTMOD™ A-Series Module
200 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 109°C)*⁴
Peak Collector Current (Pulse Repetition)*²
Emitter Current (TC = 25°C)
Peak Emitter Current (Pulse Repetition)*²
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)*^2,*⁴
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE*¹
IEM*¹
PC
—
—
—
VISO
CM200DY-34A
–40 to 150
–40 to 125
1700
±20
200
400
200
400
1980
40
40
400
3500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Symbol
Test Conditions
Min.
Typ.
Max. Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
IGES
VGE = VGES, VCE = 0V
—
—
2.0
µA
VGE(th)
VCE(sat)
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V, Tj = 25°C*³
IC = 200A, VGE = 15V, Tj = 125°C*³
5.5
7.0
8.5
Volts
—
2.2
2.8
Volts
—
2.45
—
Volts
QG
VCC = 1000V, IC = 200A, VGE = 15V
—
1330
—
nC
VEC*¹
IE = 200A, VGE = 0V*³
—
—
3.0
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Cies
—
Output Capacitance
Coes
VCE = 10V, VGE = 0V
—
Reverse Transfer Capacitance
Cres
—
Inductive
Turn-on Delay Time
td(on)
—
Load
Rise Time
tr
VCC = 1000V, IC = 200A,
—
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 2.4Ω,
—
Time
Fall Time
tf
Inductive Load
—
Diode Reverse Recovery Time
trr*¹
Switching Operation,
—
Diode Reverse Recovery Charge
Qrr*¹
IE = 200A
—
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
—
49.4 nf
—
5.6 nf
—
1.06 nf
—
550
ns
—
190
ns
—
750
ns
—
350
ns
—
450
ns
20
—
µC
2
10/13 Rev. 2