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CM200DU-24F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DU-24F
Trench Gate Design Dual IGBTMODâ¢
200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ⤠150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M6 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
â
Mounting Torque, M6 Mounting
â
Weight
â
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
CM200DU-24F
-40 to 150
-40 to 125
1200
±20
200
400*
200
400*
890
40
40
400
2500
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
VCE = VCES, VGE = 0V
â
IGES
VGE = VGES, VCE = 0V
â
VGE(th)
IC = 20mA, VCE = 10V
5
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
â
IC = 200A, VGE = 15V, Tj = 125°C
â
QG
VCC = 600V, IC = 200A, VGE = 15V
â
VEC
IE = 200A, VGE = 0V
â
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
â
â
6
1.8
1.9
2200
â
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Max.
1
40
7
2.4
â
â
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
2
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