CM150EXS-24S Datasheet, PDF (2/9 Pages) Powerex Power Semiconductors – Chopper IGBT NX-Series Module 150 Amperes/1200 Volts

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CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 120°C)^*2
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Repetitive Peak Reverse Voltage (Clamp Diode Part, V_GE = 0V)
Forward Current (Clamp Diode Part, T_C = 25°C)^*2,*4
Forward Current (Clamp Diode Part, Pulse, Repetitive)^*3
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature
Case Temperature
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
51.1
39.9
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
V_RRM
I_F^*1
I_FRM^*1
T_j(max)
T_j(op)
T_stg
T_C
V_ISO
Rating
1200
±20
150
300
1150
1200
150
300
+175
-40 to +150
-40 to +125
-40 to +125
2500
Th
Tr
18.7
Di
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor
Units
Volts
Volts
Amperes
Amperes
Watts
Volts
Amperes
Amperes
°C
°C
°C
°C
Volts
2
07/12 Rev. 0