CM150DX-34SA Datasheet, PDF (2/9 Pages) Powerex Power Semiconductors – Dual IGBT NX-Series Module 150 Amperes/1700 Volts

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CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 125°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current (T_C = 25°C)^*2,*4
Emitter Current (Pulse, Repetitive)^*3
Maximum Junction Temperature
Module
Characteristics
Maximum Case Temperature^*2
Operating Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
T_j(max)
Rating
1700
±20
150
300
1500
150
300
175
Symbol
T_C(max)
T_j(op)
T_stg
V_ISO
Rating
125
-40 to +150
-40 to +125
4000
Di2 Tr2
Th
Tr1 Di1
LABEL SIDE
34.0
27.2
26.8
25.3
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
°C
Units
°C
°C
°C
Volts
2
10/12 Rev. 0