CM10MD1-24H Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM10MD1-24H
CI Module
Three Phase Converter + Three Phase Inverter
10 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M4 Mounting Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz
Converter Sector
Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current
Surge (Non-repetitive) Forward Current
I²t for Fusing
Symbol
T_j
T_stg
—
—
V_RMS
V_RRM
E_a
I_O
I_FSM
I²t
IGBT Inverter Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current
Collector Current (Pulse)*
Emitter Current**
Emitter Current** (Pulse)*
Maximum Collector Dissipation
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_C
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Converter Sector
Repetitive Reverse Current
Forward Voltage Drop
Thermal Resistance (Junction-to-Fin)
I_RRM
V_FM
R_th(j-f)
V_R = V_RRM, T_j = 150°C
I_F = 10A
Per Diode
IGBT Inverter Sector
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate-Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I_CES
V_GE(th)
I_GES
V_CE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Thermal Resistance (Junction-to-Fin)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V_EC
t_rr
Q_rr
R_th(j-f)
V_CE = V_CES, V_GE = 0V
V_CE = 10V, I_C = 1mA
V_GE = V_GES, V_CE = 0V
V_GE = 15V, I_C = 10A, T_j = 25°C
V_GE = 15V, I_C = 10A, T_j = 150°C
V_GE = 0V, V_CE = 10V
V_CC = 600V, I_C = 10A, V_GE = 15V
V_GE1 = V_GE2 = 15V,
V_CC = 600V, I_C = 10A,
R_g = 31Ω,
Resistive Load
I_E = 10A, V_GE = 0V
I_E = 10A, V_GE = 0V,
di_E/dt = -20A/ms
Per IGBT
Per FWDi
* Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
** Characteristics of the anti-parallel emitter-collector free-wheel diode.
2
CM10MD1-24H
-40 to 150
-40 to 125
13
60
2500
1600
440
10
100
42
1200
±20
10
20
10
20
57
Units
°C
°C
in-lb
Grams
Volts
Volts
Volts
Amperes
Amperes
A²s
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Min.
Typ. Max. Units
—
—
8
mA
—
—
1.7
Volts
—
—
2.7
°C/W
—
—
1
mA
4.5
6.0
7.5
Volts
—
—
0.5
µA
—
2.7
3.4
Volts
—
2.45
—
Volts
—
—
2.0
nF
—
—
1.5
nF
—
—
0.4
nF
—
50
—
nC
—
—
100
nS
—
—
200
nS
—
—
150
nS
—
—
350
nS
—
—
3.5
Volts
—
—
250
nS
—
0.08
—
µC
—
—
2.2
°C/W
—
—
3.1
°C/W