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CM100TF-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-12H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M4 Terminal Screws
Tj
Tstg
VCES
VGES
IC
ICM
IF
IFM
Pd
–
Max. Mounting Torque M5 Mounting Screws
–
Module Weight (Typical)
–
V Isolation
VRMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V
IC = 100A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG
VCC = 300V, IC = 100A, VGS = 15V
Diode Forward Voltage
VFM
IE = 100A, VGS = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
VGE = 0V, VCE = 10V, f = 1MHz
Resistive
Turn-on Delay Time
td(on)
Load
Switching
Rise Time
Turn-off Delay Time
tr
td(off)
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 6.3Ω
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
tf
trr
IE = 100A, diE/dt = –200A/µs
Qrr
IE = 100A, diE/dt = –200A/µs
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Rth(j-c)
Rth(j-c)
Per IGBT
Per FWDi
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
CM100TF-12H
–40 to 150
–40 to 125
600
±20
100
200*
100
200*
400
13
17
540
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
–
–
1.0
mA
–
–
0.5
µA
4.5
6.0
7.5
Volts
–
2.1
2.8** Volts
–
2.15
–
Volts
–
300
–
nC
–
–
2.8
Volts
Min.
Typ.
Max. Units
–
–
10
nF
–
–
3.5 nF
–
–
2
nF
–
–
120
ns
–
–
300
ns
–
–
200
ns
–
–
300
ns
–
–
110
ns
–
0.27
–
µC
Min.
Typ.
Max. Units
–
–
0.31 °C/W
–
–
0.70 °C/W
–
–
0.033 °C/W
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