BCR10CS Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage ^V2
@
#
!
Gate trigger current ^V2
@
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=15A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ^V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
V5. High sensitivity (IGT≤20mA) is also available. (IGT item 1)
Limits
Unit
Min. Typ. Max.
—
—
2.0
mA
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
—
—
30 ^V5 mA
—
—
30 ^V5 mA
—
—
30 ^V5 mA
0.2
—
—
V
—
—
1.8
°C/ W
V3
—
—
V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R
—
L
10
R
—
12
600
L
10
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–5A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10²
7
5
3
2
Tj = 125°C
10¹
7
5
3
2
Tj = 25°C
10⁰
7
5
3
2
10^–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
10⁰
2 3 4 5 7 10¹
2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999