BCR10CM Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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BCR10CM
Triac
10 Amperes/400-600 Volts
Absolute Maximum Ratings, T_a = 25 °C unless otherwise specified
Ratings
Symbol
Repetitive Peak Off-state Voltage
Non-repetitive Peak Off-state Voltage
On-state Current, T_c = 103°C, T_c = 93°C
Non-repetitive Peak Surge, One Cycle (60 Hz)
I²t for Fusing, t = 8.3 msec
V_DRM
V_DSM
I_T(RMS)
I_TSM
I²t
Peak Gate Power Dissipation, 20 ␮sec
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Storage Temperature
Operating Temperature
Weight
P_GM
P_G(avg)
I_GM
V_GM
T_stg
T_j
–
BCR10CM-8
400
500
10
100
41.6
5
0.5
2
10
-40 to 125
-40 to 125
2.3
BCR10CM-12
600
720
10
100
41.6
5
0.5
2
10
-40 to 125
-40 to 125
2.3
Units
Volts
Volts
Amperes
Amperes
A²sec
Watts
Watts
Amperes
Volts
°C
°C
Grams
T-46