QIP0640001 Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts)

QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 [phone]
Asymmetrical Half Bridge IGBT H-Series
Hermetic Module
400 Amperes/600 Volts
Hermetic Package TBD
Description:
Powerex IGBT Hermetic modules are
designed for use in switching applications.
Each Module consists of two IGBT transistors,
four super fast free wheel diodes in an
asymmetrical half bridge configuration with
each transistor having a reverse connected
super fast recovery free wheel diode. All
components are located in a hermetically
sealed chamber and are electrically isolated
from the heat sinking base plate, offering
simplified system assembly and thermal
management.
Features:
♦ Low Drive Power
♦ Low V_CE(sat)
♦ Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
♦ Isolated Base plate for Easy Heat
sinking
♦ Fully Hermetic Package
♦ Package Design Capable of Use at
High Altitudes
♦ Package can be modified to adhere
to customer dimensions.
♦ High Capacity Diodes (D1 & D3)
Schematic:
D1
D4
Page 1
D2
D3
Applications:
♦ AC Motor Control
♦ Motion/Servo Control
♦ Air Craft Applications
Ordering Information:
PRELIMINARY
06/06/97