QID4515001 Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com
QID4515001
Dual IGBTMOD™
HVIGBT Module
150 Amperes/4500 Volts
S NUTS
(3TYP)
A
D
F
F
J (2TYP)
C
N
BE
1
2
3
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
4
1
5
6
2
8
7
3
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.51
140.0
B
2.87
73.0
C
1.89
48.0
D
4.88±0.01 124.0±0.25
E
2.24±0.01 57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.44
0.16
M6 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
36.5
4.0
M6
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
 Low V_CE(sat)
 Creepage and Clearance
meet IEC 60077-1
 High Isolation Voltage
 Rugged SWSOA and RRSOA
 Compact Industry Standard
Package
Applications:
 Traction
 Medium Voltage Drives
 High Voltage Power Supplies
09/12 Rev. 8
1