FX50SMJ-2 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
FX50SMJ-2
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9 max
4
φ 3.2
Dimensions in mm
4.5
1.5
2
4.4
G
1.0
1 23
5.45
5.45
0.6
2.8
• 4V DRIVE
• VDSS ............................................................. –100V
• rDS (ON) (MAX) ................................................ 50mΩ
• ID .................................................................... –50A
• Integrated Fast Recovery Diode (TYP.) .........100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
3
1 GATE
1
2 DRAIN
3 SOURCE
4 DRAIN
24
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Conditions
Ratings
–100
±20
–50
–200
–50
–50
–200
150
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999