FS1AS-18A Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS1AS-18A
MITSUBISHI Nch POWER MOSFET
FS1AS-18A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
4
Dimensions in mm
0.5 ± 0.1
1.0
0.9MAX.
2.3 2.3
0.5 ± 0.2
0.8
¡VDSS ................................................................................ 900V
¡rDS (ON) (MAX) .............................................................. 15.0Ω
¡ID ............................................................................................ 1A
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
123
wr
q
e
q GATE
w DRAIN
e SOURCE
r DRAIN
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
900
±30
1
3
55
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
W
°C
°C
g
Feb.1999