FS10VSJ-06 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS10VSJ-06
MITSUBISHI Nch POWER MOSFET
FS10VSJ-06
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
r
10.5MAX.
Dimensions in mm
4.5
1.3
0
+0.3
–0
1
5
B
0.5
0.8
¡4V DRIVE
¡VDSS .................................................................................. 60V
¡rDS (ON) (MAX) .............................................................. 70mΩ
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.) ............. 55ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
qwe
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Conditions
Ratings
60
±20
10
40
10
10
40
30
–55 ~ +150
–55 ~ +150
1.2
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999