FS10VS-6 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS10VS-6
MITSUBISHI Nch POWER MOSFET
FS10VS-6
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
r
10.5MAX.
Dimensions in mm
4.5
1.3
1
5
0.8
0
+0.3
–0
0.5
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.68Ω
¡ID .......................................................................................... 10A
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
qwe
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
300
±30
10
30
90
–55 ~ +150
–55 ~ +150
1.2
Unit
V
V
A
A
W
°C
°C
g
Feb.1999