FS100KMJ-03 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS100KMJ-03
MITSUBISHI Nch POWER MOSFET
FS100KMJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
f 3.2 ± 0.2
¡4V DRIVE
¡VDSS ................................................................................. 30V
¡rDS (ON) (MAX) ............................................................ 4.7mΩ
¡ID ...................................................................................... 100A
¡Integrated Fast Recovery Diode (TYP.) .......... 100ns
¡Viso ............................................................................... 2000V
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
2.54 ± 0.25
1.1 ± 0.2
E ^{1.1 ± 0.2}
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
w
q GATE
q
w DRAIN
e SOURCE
e
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
L = 30µH
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
30
±20
100
400
100
100
400
35
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999