CT30VS-8 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – STROBE FLASHER USE

CT30VS-8
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VS-8
STROBE FLASHER USE
OUTLINE DRAWING
r
10.5MAX.
Dimensions in mm
4.5
1.3
1
5
0.8
0
+0.3
–0
0.5
¡VCES ............................................................................... 400V
¡ICM ................................................................................... 180A
APPLICATION
Strobe Flasher.
qwe
wr
q GATE
q
w COLLECTOR
e EMITTER
r COLLECTOR
e
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
ICM
Tj
Tstg
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Conditions
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
See figure 1
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±40V, VCE = 0V
VCE = 10V, IC = 1mA
Ratings
Unit
400
V
±30
V
±40
V
180
A
–40 ~ +150
°C
–40 ~ +150
°C
Limits
Unit
Min.
Typ. Max.
450
—
—
V
—
—
10
µA
—
—
±0.1 µA
—
—
7.0
V
Feb.1999