CR8PM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

CR8PM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR8PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
• IT (AV) ........................................................................... 8A
• VDRM .............................................................. 400V/600V
• IGT .......................................................................... 15mA
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
2.54
2.54
0.5
2.6
2
3
1
123
∗ Measurement point of
case temperature
1 CATHODE
2 ANODE
3 GATE
TO-220F
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class
Unit
8
12
400
600
V
500
720
V
320
480
V
400
600
V
320
480
V
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Viso
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=81°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, each terminal to case
Ratings
Unit
12.6
A
8.0
A
120
A
60
A²s
5.0
W
0.5
W
6.0
V
10
V
2.0
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
1500
V
Feb.1999