CM75TJ-24F Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Trench Gate Design Six IGBTMOD™ 75 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM75TJ-24F
Trench Gate Design
Six IGBTMOD™
75 Amperes/1200 Volts
A
D
E
U
F
G
H
NOT
NOT
CONNECTED
CONNECTED
19
17
18
16
15
BJ
20
Tc
21
L
S
T
M
N
12
34
P
56
7 8 9 10 11 12
R
Q
Y
X
C
14
K
13
Tc
L
VW
21
13
1
5
9
2
6
10
3
7
11
4
8
12
20
14
19
17
15
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
4.78
2.42
0.67
4.33±0.01
3.00
0.75
0.60
0.15
2.26
1.97±0.01
1.07
Millimeters
121.5
61.5
17.0
110.0±0.25
76.2
19.05
15.24
3.81
57.5
50.0±0.25
27.0
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
0.15
0.75
0.15
3.00
0.60
0.45
0.04
0.22 Dia.
0.12
0.81
3.72
4.62
Millimeters
3.81
19.05
3.81
76.2
15.24
1.15
1.0
5.5 Dia.
3.0
20.5
94.5
118.11
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V_CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TJ-24F is a
1200V (V_CES), 75 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating
Type
Amperes
CM
75
V_CES
Volts (x 50)
24
1