English
Language : 

CM75DY-12H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75DY-12H
Dual IGBTMOD™
H-Series Module
75 Amperes/600 Volts
DM
E
A
B
F
C
F
K
C2E1
E2
N
(3 TYP.)
R
H
L
C1
S - M5 THD
(3 TYP.)
R
H
Q - DIA.
(2 TYP.)
J
R
.110 TAB
P
G
C2E1
G2
E2
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.57
1.34
1.22 Max.
0.90
0.85
0.79
0.71
Millimeters
94.0
80.0±0.25
40.0
34.0
31.0 Max.
23.0
21.5
20.0
18.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.67
0.63
0.51
0.47
0.28
0.256 Dia.
0.16
M5 Metric
Millimeters
17.0
16.0
13.0
12.0
7.0
Dia. 6.5
4.0
M5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75DY-12H
is a 600V (VCES), 75 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
VCES
Amperes
Volts (x 50)
CM
75
12
229