CM150DU-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150DU-24H
Dual IGBTMOD™
U-Series Module
150 Amperes/1200 Volts
T_C Measured
Point
A
D
BE
T ^CM
F
S 4 - Mounting
Holes
H
U
J
H
3 - M6 Nuts
Q
Q
P
N
G
K
K
K
R
M
C
L
C2E1
E2
G2
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D
3.66±0.01
93.0±0.25
E
1.88±0.01
48.0±0.25
F
0.67
17.0
G
0.16
4.0
H
0.24
6.0
J
0.59
15.0
Dimensions
K
L
M
N
P
Q
R
S
T
Inches
0.55
0.87
0.33
0.10
0.85
0.98
0.11
0.25 Dia.
0.6
Millimeters
14.0
22.0
8.5
2.5
21.5
25.0
2.8
6.5 Dia.
15.15
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V_CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-24H is a
1200V (V_CES), 150 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
V_CES
Type
Amperes
Volts (x 50)
CM
150
24
53