CM100DY-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM100DY-24H
Dual IGBTMOD™
H-Series Module
100 Amperes/1200 Volts
C
K
A
B
H
E
E
H
C2E1
E2
C1
S
G
L
R - M5 THD (3 TYP.)
P - DIA. (2 TYP.)
J
J
J
N
N
S
.110 TAB
M
D
F
Q
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.89
1.18 Max.
0.90
0.83
0.71
0.67
0.62
Millimeters
94.0
80.0±0.25
48.0
30.0 Max.
23.0
21.2
18.0
17.0
16.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.51
0.47
0.30
0.28
0.256 Dia.
0.26
M5 Metric
0.16
Millimeters
13.0
12.0
7.5
7.0
Dia. 6.5
6.5
M5
4.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□ Low Drive Power
□ Low V_CE(sat)
□ Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-24H
is a 1200V (V_CES), 100 Ampere
Dual IGBTMOD™ Power Module.
Type
Current Rating
V_CES
Amperes
Volts (x 50)
CM
100
24
261