LP28007 Datasheet, PDF (8/11 Pages) Lowpower Semiconductor inc – Internal Integrate P-MOSFETs

Preliminary Datasheet
LP28007
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device.
These are for stress ratings. Functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may remain possibility to affect device reliability.
Note 2. θJA Is measured in the natural convection at TA=25℃ on a high effective thermal conductivity test
board 4 layers,1S of JEDEC 51-7 thermal measurement standard. The case point of θJc is on the
expose pad for the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
VSET VS. Temperature (VBATT > 5.8V)
VSET VS. Temperature (VBATT ＜ 5.8V)
Charge Current VS.Battery Voltage(VIN=10V)
Charge Current VS.VIN(VBATT=8.0V)
Rset=3k
Regulated Output Voltage vs.Supply Voltage
Regulated Output Voltage vs.Temperature
LP28007 – 02 May.-2013
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www.lowpowersemi.com
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