LPM9017 Datasheet, PDF (1/7 Pages) Lowpower Semiconductor inc – P-Channel Enhancement Mode Field Effect Transistor

Preliminary Datasheet
LPM9017
LPM9017 - -30V/4A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM9017 is the P-channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high-side
switching.
Ordering Information
LPM9017- □ □ □
F: Pb-Free
Package Type
B3: SOT23
Features
■ -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V
■ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V
■ Super high density cell design for extremely
low RDS(ON)
■ SOT23 Package
Applications
 Portable Media Players
 Cellular and Smart mobile phone
 LCD
 DSC Sensor
 Wireless Card

Marking Information
Please see website.
Pin Configurations
SOT23L(Top View)
LPM9017 – 00 Version 1.0 Datasheet Dec.-2008
www.lowpowersemi.com
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