LPM9014 Datasheet, PDF (1/3 Pages) Lowpower Semiconductor inc – N-Channel Enhancement Mode Field Effect Transistor

LPM9014
LPM9014
N-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM9014 uses advanced
trench technology to provide excellent
RDS(ON), low gate charge and
operation with gate voltages as low as
1.8V. This device is suitable for use as a
load switch or in PWM applications.
Standard Product LPM9014 is Pb-free
(meets ROHS & Sony 259
specifications). LPM9014L is a Green
Product ordering option. LPM9014 and
LPM9014L are electrically identical.
Pin Configurations
Features
VDS (V) = 20V
ID = 4.2A
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
RDS(ON) < 87mΩ (VGS = 1.8V)
LPM9014 Sep..-2003
1-3