LPM9013 Datasheet, PDF (1/7 Pages) Lowpower Semiconductor inc – P-Channel Enhancement Mode Field Effect Transistor

Preliminary Datasheet
LPM9013
LPM9013
P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM9013 is the P-channel logic enhancement
mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high-side
switching.
Ordering Information
LPM9013- □ □ □
Features
■ -20V/-2.6A,RDC(ON)=125mΩ(typ.)@VGS=-2.5V
■ -20V/-3.0A,RDC(ON)=98mΩ(typ.)@VGS=-4.5V
■ Super high density cell design for extremely
low RDC(ON)
■ SOT23 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
F: Pb-Free
Package Type
B3: SOT23
Marking Information
Please see website.
Pin Configurations
SOT23L(Top View)
LPM9013 – 00 Version 1.0 Datasheet Dec.-2008
www.lowpowersemi.com
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