LPM4953 Datasheet, PDF (1/6 Pages) Lowpower Semiconductor inc – Dual 30V P-Channel PowerTrench MOSFET

Preliminary Datasheet
LPM4953
LPM4953
Dual 30V P-Channel PowerTrench MOSFET
General Description
The LPM4953 is 2-channel the P-channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high=-side
switching.
Ordering Information
LPM4953- □ □ □
Features
■ -30V/-5.0A,RDC(ON)=38mΩ(typ.)@VGS=-10V
■ -30V/-3.6A,RDC(ON)=60mΩ(typ.)@VGS=-4.5V
■ Super high density cell design for extremely
low RDC(ON)
■ SOP8 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
F: Pb-Free
Package Type
SO: SOP-8
Marking Information
Please see website.
Pin Configurations
SOP8(Top View)
LPM4953 – 00 Version 1.0 Datasheet Dec.-2009
www.lowpowersemi.com
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